Schottky barrier diode is a kind of majority carrier device , using the contact barrier formed between metal and semiconductor to work . it has the advantages of low turn - on voltage and high response frequency , compared with pn junction diodes 肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的pn结二极管相比，它具有正向导通电压低，响应速度快等优良特性。
The brief research in this dissertation is twofold : one is the monitoring of the corrosion of reinforced bar in concrete by using the compression sensibility of smart concrete ; the other is the prevention of the corrosion of reinforced bar by using the smart concrete pn junctions 本文的主要工作分为两部分：一部分是用机敏混凝土的压敏性进行钢筋混凝土结构中钢筋锈蚀监测：另一部分是用机敏混凝土pn结进行钢筋锈蚀防护。
On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range 3 .由于lc压控振荡器中的pn结变容管品质因数低、调谐范围小,本次设计的lc压控振荡器采用了强反型mos变容管,仿真结果表明,所设计的lc压控振荡器具有15 %调谐范围。
The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region . the relationship of the ideality factor to the applied voltage is theoretically studied 提出了中子辐照下sicpn结电特性退化的新的理论， pn结耗尽区中的辐照陷阶在耗尽区电场的作用下热发射效应得到加强，从而导致pn结正偏和反偏时的复合电流和产生电流的改变。
At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency 在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。
A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented . the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors . the substrate pn junction can be realized in standard silicon technologies without additional processing steps 提出了一种新的方法来减小硅衬底损耗提高集成电感的q值：在硅衬底形成间隔的pn结隔离以阻止涡流减少损耗，这种方法工艺简单且与常规硅集成电路工艺兼容。
( 1 ) cfrc can effectively reduce the driving voltage required by catholic protection because of its good electric conductivity ; ( 2 ) applying cement - based pn - junctions on the prevention of reinforcement corrosion . in the interface of p - type region and n - type region of pn junctions a self - built electric field will be formed , and its direction is from n - type region to p - type region 由于cfrc具有良好的导电能力，利用cfrc进行阴极防护，能有效的降低阴极防护驱动电压；应用水泥基pn结的自建电场进行钢筋锈蚀防护，能在不降低结构性能的基础上提高钢筋的电子逸出功，使钢筋中的电子不易逸出，达到钢筋锈蚀防护的目的。
