磁控溅射

• In the process of sputtering , it is important to characterize the thickness and residual stress of plct films . in experiment . through the technology of x - ray
  基于掠入射x射线衍射( gixrd )的残余应力测量表明,射频磁控溅射plct薄膜中为压应力。
• Excellent results have been obtained by using dc magnetron sputtering technology . a solar absorptance of 0 . 94 - 0 . 96 with an emittance of 0 . 04 - 0 . 06 at 100 has been achieved
  磁控溅射技术的准确结果显示这种真空管在100时能够达到吸收率： 0 . 94 - 0 . 96
• In this paper , the emphasis of research is to build a measurement system of magnetoelectronics transit , and we fabricate fe _ 3o _ 4 film by dc magnetron sputtering
  论文以建立磁电子输运测试系统为研究的中心,并采用直流磁控溅射法制备了多晶fe _ 3o _ 4薄膜。
• It ' s the first time to deposit copper film on surface of al mmcs by magnetron sputtering , and embed al mmcs into the sputtering region of al target
  本文首次提出使用磁控溅射法制备瞬间液相连接的中间层。一种是直接沉积法，另一种是溅射去除氧化膜再沉积法。
• The purity of film deposited by rf magnetron sputtering is very high , and the reason that impurities exist in the film deposited by dc magnetron sputtering is analyzed
  射频磁控溅射法可获得高纯的cu ag膜，分析了直流磁控溅射法制备的cu ag薄膜中存在杂质的原因。
• The seebeck and magnetoresistive effects were also studied . the experimental results showed that the azo thin films had the structural , optical and electrical properties better
  实验结果表明,利用直流反应磁控溅射法制备的azo薄膜,具有较好的晶体结构和光电特性。
• ( 2 ) coating cracks and defects were partly sealed by magnetron sputtering a si film of 3um , and weight loss of sic - c / sic in simulated air at 1300 was reduced
  ( 2 )磁控溅射约3umsi膜，涂层裂纹和缺陷被部分封填， sic - c sic复合材料在1300模拟空气中的氧化失重降低。
• The results indicate that it has an excellent surface . aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas
  氮化铝薄膜样品是利用高纯铝靶,在氮气加氩气气氛下用直流和射频反应磁控溅射法制备的。
• Inlaid target sputtering to remove oxide scale on surface of al mmcs at first , then another copper target sputtering , copper film was deposited on the inlaid target
  研究了磁控溅射法在待连接表面沉积中间层的工艺参数以及不同的中间层制备方法对tlp连接接头组织和性能的影响。