Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency 在sige虚拟衬底上生长应变si层做器件沟道,将大大增加载流子的迁移率,从而提高器件的跨导和其他性能。
So it is valuable to research the high temperature characteristic of microelectronics devices . this paper discussed the electrical characteristic of short channel most at very high temperature 本文以短沟道most电学参数的温度特性为研究对象，对高温短沟道most的电学特性进行了深入的探讨。
In this paper , the factors which affect the channel length and the length of the pinch - off region of the channel are discussed , and the function of the vdmosfet is improved by optimizing the channel section 摘要讨论了影响沟道长度及沟道的夹断区长度的因素，通过沟道区的优化促进了vdmosfet性能的提高。
A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically 在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。
According to the analysis of physical quantities in the body , we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions 通过对器件体内各物理量的定量分析，得出pn结对肖特基的作用是通过其耗尽层和两pn结之间的间隙来影响肖特基的导电沟道这一结论。
This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted , which is for short channel mos field effect transistor specially . these works are presented in this paper . 1 本论文选取目前业界占主流地位的bsim3 ( berkeleyshort - channeligfetmodel )为将要提取的模型，它是专门为短沟道mos场效应晶体管而开发的一种模型。
