It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established 通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。
The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase . this could be mainly due to the influence of surface states Gaasmesfet动态击穿特性测试结果表明， gaasmesfet的击穿电压随栅极与漏极上所加脉冲电压宽度的增大而增大，这主要是因为表面态的原因。
With offset fp structure obtained by using our method the device breakdown voltage is higher than flr structure , and this structure can screen the influence of interface charge in part and improve the stability of device performance 用我们的方法设计的偏移场板结构不仅比场限环结构提高了击穿电压，而且部分地屏蔽了界面电荷对器件击穿电压的影响，提高了器件工作性能的稳定性。
In order to improve process quality and increase probability , we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions . finally , dc - 500mhz midf switch is fabricated , in which some important conclusions and suggestions are introduced 工艺研究的重点是改进工艺质量，提高成品率，为此我们通过调整工艺条件来优化欧姆接触电阻和提高器件的击穿电压。
The mathematical relationship of breakdown voltage of gas discharge in co2 laser excited by rf is derived by using reduced model based on the theory of gas discharge and several physical parameters which influence gas discharge breakdown of laser are pointed out 摘要以气体放电理论为基础，利用简化模型推导出射频激励co2激光器气体放电击穿电压的数学关系式，指出影响激光气体放电击穿的几个物理参量。
The controller can ensure reliable cool start , at the same time meet the rapid activation of the warm start . 3 、 the realization theory of the boost power factor correction that uses quasi - length models , uncertain frequency , and peak current - controlled devices , is derived theoretically 根据金卤灯击穿电压?时间的关系,提出了一种采用脉冲变压器的快速启动方式,既能保证冷灯可靠启动,同时又满足了热灯快速启动的要求。
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation 采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。
