The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated 其中，采用cvd技术制备的以硫为施主的n型金刚石薄膜的迁移率与b单晶金刚石硫掺杂的迁移率达到了相同的量级。
The ps was formed by photo - electrochemical means . anodization was carried out on n - type silicon ( 111 ) substrates with resistivity ( n + - n - si : 3 ? cm - 5 ? cm n - si : 80 ? cm - 100 ? cm ) 采用单面抛光的n型单晶硅片，晶面为( 111 ) ，电阻率为3 ? cm - 5 ? cm和80 ? cm ? 100 ? cm ，经过阳极氧化制得的多孔硅在紫外灯下发红橙光或红光。
High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out 本文研究了在gaas和gap衬底上，本征型和n型al掺杂zns基单晶薄膜的分子束外延生长，获得了高质量的单晶外延薄膜。
The toxin can reversible block the neuromuscular transmission in an isolated mouse phrenic nerve - diaphragm preparation and also is a neurotoxin ( n - type ca2 + channels inhibitor ) which binds to the postsynaptic nicotinic acetylcholine receptor ( nachr ) 溶液构象研究表明，它采取自然界中其它蛋白质多肽普遍采用的一种紧凑、致密的抑制剂胱氨酸结模体( ick ) 。
Tem micrographies show that tioj nanoparticles are partly coated with the polymer . we alse study effect of pani film . finally a new organic polymer stk junction i s produced by using p - type polyaniline and n - type semiconductor 最后，直接利用csa - pani滤液在导电玻璃上成膜做成器件，并对器件的性能进行了分析，这对于聚苯胺在在光电器件中应用具有指导意义。
Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress 本文主要研究了典型尺寸的n型金属诱导横向结晶多晶硅薄膜晶体管在两种常见的直流应力偏置下的退化现象:热载流子退化和自加热退化。
The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting 6文章还对立方氨化硼薄膜的成核和生长机理，氮化硼薄膜的n型掺杂机制和bn型）侣i …型）异质结的电流输运机制进行了探讨。
Polycrystalline diamond films were deposited on n - type si substrates . in order to achieve a better distribution of the implanted element , boron ions were implanted by two steps . the i - v curves were studied , the p - n junction effect is very evident 在n型引衬底上沉积一层连续的金刚石膜，通过二次离子注入的方法使b离子比较均匀的分布在金刚石膜中，通过测量i - v曲线，可以明显的看出p - n结效应的存在。
The research and application of the diamond films were reviewed in this paper , and the nucleations on different substrates in hfcvd ( i lot filament chemical vapor deposition ) system were introduced . the improvement of the diamond nucleation on si , ni , cu was investigated , in order to deposit diamond of high density . the p - n junction between b - implanted diamond films and n - type si substrate was investigated 本论文简要叙述了金刚石薄膜的研制进展和应用，介绍了用化学气相沉积法( hotfilamentchemicalvapordeposition )在不同的衬底上的金刚石薄膜的制备方法和形核，并对si 、 ni 、 cu三种不同的衬底的金刚石膜研究了如何增大形核密度、提高形核质量。
Huwentoxin - i ( hwtx - i ) is a neurotoxin purified from the vemon of the chinese bird spider selenocosmia huwena which consists of 33 amino acid residues , hwtx - i is a reversible presynaptic inhibitor which can selectively inhibit n - type ca2 + channel . recent research study shows that it is a peptide with analgesia activity , so it is promised to be exploited into a new kind of analgesia medicine . the synthetic hwtx - i gene was expressed in a new eukaryotic expression system - pichia pastoris which has the advantage of high stability , high secretion and high expression 本文报道了hwtx -全化学合成基因在p . pastoris系统的表达，纯化及生物学活性的鉴定，根据已得到的hwtx -基因的cdna序列，人工合成了6条寡核苷酸链，经磷酸化，退火连接得到完整的hwtx -基因片段，将该基因插入到去磷酸化的质粒ppic9k中转化top10f ’菌后，阳性克隆经两次pcr鉴定和dna序列测定证明插入基因的方向和序列完全正确。
