Semiconductor discrete device . detail specification for type cs 6768 and cs 6770 silicon n channel enhancement mode field effect transistor 半导体分立器件. cs6768和cs6770型硅n沟道增强型场效应晶体管详细规范
Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp , gt and gct classes 半导体分立器件gp gt和gct级cs1型硅n沟道耗尽型场效应晶体管.详细规范
Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs4 . gp , gt and gct classes 半导体分立器件gp gt和gct级cs4型硅n沟道耗尽型场效应晶体管.详细规范
The analysis of primary oil distribution shows the base - level controlled oil distribution in reservoir . in this paper , subjects as following are discussed in detail 而构成储层的则主要是沟道、沟道间和席状砂体。
Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs10 . gp , gt and gct classes 半导体分立器件gp gt和gct级cs10型硅n沟道耗尽型场效应晶体管.详细规范
We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect 在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。
An affluence model for debris flow and river is established by using this assumption . the equations of the model are approximately applied for simplicity 对主河无水流情况下的泥石流运动(即沟道泥石流运动)进行了数学模拟。
The non - uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones 该解析解考虑了任意深度情况下沟道中深度方向上电势的不均匀分布，结果与数值模拟吻合。
Under self - heating stress , a general degradation in subthreshold characteristic was observed , which is the consequence of defect generation along overall channel 这主要是由于在自加热应力下,整个沟道中都出现了缺陷态的产生,从而使器件的亚阈值摆幅发生了退化。
Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse 在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。
