Second , after lots of experiments for the process of glass fiber surface modified , we primely avoided the glass fiber reunite with each other , and successfully prepared the glass fiber reinforced composites film 其次,通过大量实验对玻璃纤维表面处理工艺进行了深入研究,避免了玻璃纤维在环氧树脂基体中形成团聚的现象,从而成功地制备了应变片基底材料,即玻璃纤维增强环氧树脂复合材料薄膜。
In this thesis , the research work of a new type multifunction integrated optical circuit device ( mioc ) used in singal processing of ifog is described through parameter theoretical design and technological process . its working wavelength is 1 . 3 m 本文基于linbo _ 3衬底材料,从参数理论设计和工艺设计方面介绍了一种用于干涉型光纤陀螺( ifog )信号处理的新型多功能集成光路器件( mioc )的研制工作。
With the development of fiber - optic communication systems and fiber - optic sensors , the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure get an extensively application 随着光纤通信与光纤传感的发展,以linbo _ 3为衬底材料、以m - z干涉仪为光波导结构、采用共面行波电极( cpw )为调制电极的集成光学强度调制器得到了越来越广泛的应用。
Pt and ybco are the top electrode and the bottom electrode separately . ybco thin film is deposited on the substrate by pulsed laser deposition ( pld ) . and pzt thin film is epitaxially deposited on the bottom electrode also by pld 实验中薄膜样品的结构为pt pzt ybco lao ， lao为基底材料， pt和ybco分别为pzt薄膜的上电极和下电极， ybc0薄膜用脉冲激光溅射( pld )工艺沉积在基底上， pzt薄膜同样用pld工艺外延生长在下电极ybc0薄膜上。
The main results are summarized as follows : first , formulation tailoring and curing process of epoxy resin adhesive have been studied , and the peel strengths were tested . the curing temperatures are obtained following the result of curing reaction heat flow tested by dsc 主要研究内容和结果如下:首先,研究了作为基底材料基体的环氧树脂胶粘剂的配方,利用差示扫描量热仪( dsc )确定了胶粘剂的固化温度,并对胶粘剂进行了性能测试。
It also has short protection and voltage overshot protection block . devices and ics based on esoi have the advantages of not only cheaper substrate , good performance of soi technology , but also obtaining a certain breakdown voltage and optimization of self - heating effect 基于esoi的器件及集成电路不仅衬底材料制备工艺简单，硅层厚度均匀性好，器件及电路特性具有soi结构的优点，而且还兼顾一定的耐压，对自加热效应也得到优化。
Among those methods , the vacuum metalizing method has been generally used at the early stage of cellular phone production , but has scarcely used at present due to the problems that the productivity is low , because of low productivity , high cost and poor adhesion of metal film with substrate 在这些方法中，真空金属镀方法曾普遍使用于早期的蜂窝电话生产中，但是目前罕见使用，由于生产效率低下，成本高，金属镀膜与基底材料的粘附力差。
The demand of the wafer ' s quality become higher too . the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing . in this paper , the mechanism and dynamics process of silicon polishing are systematically analyzed 随着集成电路向着甚大规模集成电路( ulsi )日新月异的发展，作为衬底材料的硅单晶片的尺寸越来越大，特征尺寸也不断减小，对硅衬底抛光片的抛光质量的要求也越来越高。
In this paper , accordiflg to the working pri nci p1es of devi cg , we design the struc ture narameter of device , and then the hexagona1 and cubic gan epitaxial layers were grown . on sapp1re and gaas substrates respect ive1y . as a resu1 t , we have fabricated gan - - based msm uv photodetectors , the responsi vity of device reach 0 本文依据msm结构探测器的工作原理，设计了器件的结构参数，并分别以蓝宝石和gaas为衬底材料生长了六方结构和四方结构的gan材料，在此基础上制备出gan - msm紫外光探测器，并取得了一些有意义的结果，我们的器件光响应度最好可达0 . 21a w 。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic 以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管( mesfet )器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si - gaas ( lecsi - gaas )衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。
