In the fifth chapter , the real and imaginary parts of third - order nonlinear susceptibility x ( 3 ) been measured for porous silicon dispersed into ccl3 solution 用z一扫描技术在io64run和532nm激光波长下对多孔硅的氯仿溶剂分散体系的光学非线性性质进行测量。
Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator 首次采用超高真空电子束蒸发的方法在多孔硅上成功地外延出晶体质量和电学性能良好的单晶硅。
With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature 多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。
The nanometer effect of the pores , which increased surface area and caused the failure of conglomeration of dbo - ppv polymer , can lead to the 90nm blue shift of the pl peaks of dbo - ppv 这一结果确认了多孔硅的跃迁过程主要是由量子限制效应决定，复合过程受表面态影响。
The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation 通过多孔硅重磷扩散钝化及低频等离子体氢钝化等多晶硅太阳电池晶界钝化，改善了太阳电池性能。
Various surface passivations of ps , such as by hydrogen , oxygen , nitrogen and noble metals , have been compared . the pss were formed by photoelectrochemical means 常见的表面修饰方法包括对多孔硅表面进行氢钝化、氧钝化、氮钝化、金属钝化等，这些修饰方法各有其特点。
Simply prepared method , complex constructure characteristics and higher photoluminescence efficiency in porous silicon have attracted a lot of attention of investigators 多孔硅( poroussilicon , ps )以其简单的制备方法、复杂的微结构特征和较高的光致发光效率吸引了众多研究者的目光。
Dangling bonds exist at the surface of porous silicon , which leads to the drop of the light - emitting efficiency . to apply porous silicon into practice , surface modification is necessary 多孔硅表面存在大量的悬挂键，容易引起发光效率的降低，行之有效的克服方法是进行表面修饰。
With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature 多孔硅改变了本体硅的能带结构，使禁带宽度展宽，并由间接禁带向直接禁带转变，实现了室温发光。
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