The shapes of the photoionization cross - section varying with the photon energy in the two cases are different . we have compared the results with that of previous work 对于每一种情况都与前人的结果做了比较，同时还与无限深势垒的情况做了比较
Microadding a appropriate amount of rare - earths oxide can decrease leakage current by means of raising the height of barrier potential and increasing grain resistivity of zinc oxide 添加微量稀土氧化物通过增大势垒高度和氧化锌晶粒电阻率来减小泄漏电流。
Abstract : in this paper , a new method of complete calibration of six - portmeasurement system is presented which uses the low - barrier schottky diode detectors for power detection 文摘:本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
The first method is to modify the cathode by lif in fabricating ito / alq3 / lif / al ; the intensity of luminescence is increased in 7 - 8 folds and the efficiency is doubled . lif is a good insulator . the high electric field makes the barrier very thin 首先是使用lif修饰阴极，利用它的绝缘性，提高lif中的电场强度，使lif形成的势垒变薄，使隧穿电子的几率几乎不变或变大。
Thus , it is believed that in subsequent high - temperature process , the base boron will outdiffuse very easily into emitter and collector , which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device 这样在后续的高温工艺中就会引起基区的杂质外扩到集电区和发射区，产生电子势垒，导致器件性能的严重退化。
Schottky barrier diode is a kind of majority carrier device , using the contact barrier formed between metal and semiconductor to work . it has the advantages of low turn - on voltage and high response frequency , compared with pn junction diodes 肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的pn结二极管相比，它具有正向导通电压低，响应速度快等优良特性。
We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current , gave a expressions for studying the temperature characteristic of source - drain current , and deduced a ztc point expression 研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；并推导了短沟道most的ztc点公式。
Starting from the study of thinking creativity thermodynamics which is the controlling stage of thinking creativity process , this paper analyses systematically the obtaining of thinking creativity has to overcome certain potential barrier , during the thinking process 摘要从思维创新过程的控制阶段思维创新热力学研究入手，系统地分析了思考过程取得创新成果必须克服一定的势垒，才能完成创新思维成果。
The purpose of this paper is to calculate the distribution of d - centers " bound states along with the variation of the width of the quantum well . we want to understand the confine effect through our calculation that the system received from the quantum well 我们在本文里研究的是方形量子阱里的d ~ -中心，计算了在量子阱中d ~ -中心的束缚态随着阱宽的分布，以期了解量子阱的势垒对磁场里d ~ -中心的限制作用。
The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface . the influence of barrier height of transport layer on current density , recombination current and recombination efficiency of the devices is great 结果表明：双层器件的发光是载流子隧穿内界面后在两有机层中的复合发光，输运层的势垒高度对载流子电流密度、复合电流密度以及器件的复合效率影响很大。
