The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance Soisingle - resurf效应研究。研究了soisingle - resurfldmos的器件参数对击穿电压和导通电阻的影响。
Interface charge has a profound influence on the breakdown voltage of flr structure . on severe condition it can make the outer flr far from main junction disfunction 界面电荷对场限环终端结构的击穿电压影响很大，严重的甚至可以使远离主结的场限环失去作用。
Theory analysis , numerical simulation and experimental result indicated that the surface electric field of the device was more uniform and the breakdown voltage was increased effectively 理论分析、数值模拟和实验结果表明,该结构可以使表面电场变得更加均匀,有效提高器件击穿电压。
Through the relations of temperature - time , pressure - time and pressure - breakdown voltage , the relation between the breakdown voltage in different stages and time is derived 通过金卤灯的温升?时间关系、气压?时间关系以及压力?击穿电压的关系,得出了金卤灯在不同阶段的时间?击穿电压的关系。
Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。
Double - stage high - speed vacuum ; quick , high efficiency remove water vapor in oil to enhance dryness level , breakdown voltage , one time filtration effort and reduce oil treatment period 双级高真空大抽速能快速高效的去除油中的水汽，使油的干燥程度击穿电压值一次性过滤效果都大大提高，缩短油处理工期。
Then the effective model ( with high - voltage interconnection ) is simulated by mdeici . the results of simulation are compared to the results of the ideal model . in addition , the 利用medici对工艺模拟得到的实际模型进行仿真,分析结构参数对击穿电压的影响,并将理想模型与实际模型的击穿电压特性进行比较。
Namely , the electric field at the drain - side edge of the gate decreases with the increasing of negative charge density in the surface , so the breakdown voltage of gaas mesfet ' s will increase 表面受主态的增多使表面负电荷密度增大，表面聚集的负电荷可以分散漏侧栅边缘处的电力线密度，减弱了栅靠漏一侧的电场强度，击穿电压提高。
High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination 由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
The simulation results indicate , deep - trench junction termination with certain width , depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value 结果表明：具有一定宽度、深度且填充绝缘介质的深阱结终端结构，阻止了结的横向扩展，并能将器件的雪崩击穿电压提高到理想值的95以上。
