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ultraviolet (uv)

"ultraviolet (uv)"的翻译和解释

例句与用法

  • It has been wildly accepted that it is a good idea to search new genes from these uncultured microorganisms during the course of study to isolate new genes from total dnas prepared from uncultured bacteria in soil , we obtained a 4 . 7 - kb dna fragment that made e . coli host cells produce a red fluorescence light under exposure of ultraviolet ( uv )
    在研究和开发未能培养的微生物的过程中,从土壤细菌中克隆到一条全长4 . 7kb的dna片段,与质粒puc118连接后转入大肠杆菌jm109菌株中,其编码的产物可以使重组菌体在紫外线照射下呈现红色荧光。将基因称为红色基因( redgene ) ,含该基因的重组菌称为red - clone 。
  • Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices . since the first observation of the stimulated ultraviolet emission at room temperature , zno has become another hotspot in the region of uv light emitting researching
    氧化锌在室温条件下具有较高的激子束缚能( 60mev ) ,保证了其在室温下较强的激子发光,是制作紫外光电子器件的合适材料,自1997年首次发现zno室温紫外受激发射以来, zno研究已成为继gan之后紫外发射材料研究的又一研究热点。
  • The lifetime of particles co - doped with li + and na + increased as compared to that of un - doped one . however , the lifetime decreased as co - doped with other dopants . in addition , we also studied that ultraviolet ( uv ) light - induced spectral change in eu3 + - doped aluminosilicate glass and red to blue up - conversion emission of tm3 + - , yb3 + - doped y2o3 nanocrystals
    ( 2 )在紫外光辐照下, eu ~ ( 3 + )掺杂的氧化物玻璃电荷迁移带强度降低,通过研究辐照与激光的功率密度、波长的关系,发现这种变化属于单光子过程,并具有频率选择性。
  • Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices . since the first observation of the stimulated ultraviolet emission at room temperature , zno has become another hotspot in the region of uv light emitting researching
    由于氧化锌在室温条件下具有较高的激子束缚能( 60mev ) ,保证了其在室温下较强的激子发光,因而被认为是制作紫外半导体激光器的合适材料,自1997年首次发现zno室温紫外受激发射以来, zno研究已成为继gan之后紫外发射材料研究的又一研究热点。
  • Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively . there were two reasons that we chose y rays , ultraviolet ( uv ) photons , and neutrons as radiation sources . one is that y rays , uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films
    本文分别采用射频( 13 . 56mhz )等离子体cvd及射频反应溅射方法制得了dlc及a - sic : h薄膜。文中主要选择y射线、紫外光及中子作为辐照源有两方面的原因:一方面,在外层空间, y射线及紫外光辐射十分严重,而在核辐射环境下y射线及中子辐射也不可忽视;另一方面, y射线辐照这两种薄膜完全是一项开创性的工作,同时国内外对紫外光子、中子与这两种薄膜作用的研究也很少。
  • In fact , gan has been regarded as one of the most promising materials for the fabrication of opto - electronic devices operating in the blue and near - ultraviolet ( uv ) regions , for instance light - emitting diodes ( leds ) and laser diodes ( lds ) , because it has large direct energy band gap of 3 . 4ev at room temperature
    Gan是一种十分优异的宽带隙-族化合物半导体材料,是当前世界上最先进的半导体材料之一。室温下, gan的禁带宽度为3 . 4ev ,是制作光电子器件,尤其是蓝、绿发光二极管( leds )和激光二极管( lds )的理想材料。
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