The experimental evidences indicated that three deposition parameters , i . e . , energy density of laser , rf plasma power and substrate negative bias played key roles in the growth of the c - bn films at room temperature . on this basis , the explanation of formation process and mechanism of c - bn film was given 通过分析各个沉积参数在薄膜生长中的作用，证明三个沉积参数：激光能量密度、射频功率和基底负偏压是室温下生长立方氮化硼薄膜的关键因素，并在此基础上初步解释了立方氮化硼薄膜的形成过程及机理。
By changing the negative bias current density , gaseous ratio and total pressure , nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied . the diamond film presents very low compressive stress and excellent field emission character 采用离子辅助轰击法，以ch _ 4 、 h _ 2为源气，衬底温度为700 900 ，通过改变衬底负偏压、 h _ 2和ch _ 4气体比例以及工作气压，制备出纳米金刚石薄膜，并对工艺参数对金刚石薄膜沉积的影响进行了研究。
The roles that the hydrogen and the substrate negative bias play in the low temperature deposition of p - sic film were further well investigated . it was found that proper hydrogen concentration in gas flows and the corresponding substrate bias are the prerequisite for low temperature synthesis of p - sic film 北京工业大学工学博士学位论文一对氢气和衬底负偏压在b七薄膜低温沉积中的作用进行了研究，发现合适比例的氢气及相应的衬底负偏压，是低温制备上七c薄膜必须的条件。
Undoped bn films exhibit a resistivity of 1 . 8 x 10 " q cm and those of doped are 7 . 3 x107 q cm . the influence of process parameters for doping studied , it showed that both s fountain temperature and substrate temperature impact the resistivity evidently . analyzed by xps and aes , s dopant concentration is made some difference with substrate negative bias voltage 研究了工艺参数对薄膜电阻率的影响，实验表明硫源加热温度和衬底温度对氮化硼薄膜的电阻率有明显影响，直流负偏压对薄膜的电阻率并没有明显影响， xps光电子能谱表明直流负偏压对薄膜中的硫含量有一定影响。
