Detail specification for electronic components . case rated bipolar transistor for silicon pnp low - frequency amplification for type 3cd 507 电子元器件详细规范. 3cd507型硅pnp低频放大管壳额定的双极型晶体管
Furthermore , the oscillator should use discrete bipolar and fet devices in the circuits recommended by the crystal manufacturers 此外，振荡器应该使用被晶体生产厂商建议的分立的双极型场效应晶体管输出。
Detail specification for electronic components . case rated bipolar transistor for silicon npn low - frequency amplification for type 3dd 313 电子元器件详细规范. 3dd 313型硅npn低频放大管壳额定的双极型晶体管
Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162 电子元器件详细规范. 3da1162型硅npn高频放大管壳额定的双极型晶体管
Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722 电子元器件详细规范. 3da1722型硅npn高频放大管壳额定的双极型晶体管
Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688 电子元器件详细规范. 3da2688型硅npn高频放大管壳额定的双极型晶体管
And also the biological parameters and the climatologic data , such as the wind variation , irradiance , net heat flux , need to be improved to get a more realistic result 另夕，极型奶姑物卫11条什所采川rl勺风场、光以z引l收、热皿得、蒸发。
With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction 就双极型晶体管而言,其门电流等于或超过必要的值,使发射极集电极充分导通的一种状态。
The analysis of the three parameters indicates that the ota designed and improved in the dissertation is better than classical bipolar otas in terms of 三项指标的分析表明,论文所设计的改进的ota的跨导在稳定性方面比经典的双极型ota具有更好的性能。
Semiconductor devices - discrete devices . part 7 : bipolar transistors . section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification 半导体器件分立器件第7部分:双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范
