In the frequency range of 1hz to 600mhz , the worst power supply rejection ratio ( psrr ) is about ? 20 . 7db 在1hz 600mhz的频率范围内,最差情况下的电源抑制比为- 20 . 7db 。
In addition , we test the rejection ratio of very sample and get the result of the rubber sponge ball no damnification to the membrane 并且通过测定各个样品对卵清蛋白的截留率表明海绵橡胶球清洗并没有造成管式膜的破损。
The results showed conversion loss less than 11 . 2db and image rejection ratio more than 20db over 4ghz rf bandwidth , when if is 70 mhz fixed 通过测试,当中频固定在70mhz ,在射频大于4ghz带宽内,变频损耗小于11 . 2db ,镜频抑制度大于20db 。
Third , according to the water flux and the rejection ratio of original sample , the fouled sample and the washed sample with rubber sponge balls , we know that the same change current of the three samples 第三，通过分别测量原始样品、污染样品和海绵橡胶球清洗样品的水通量和截留率，发现三种类型的样品的通量和截留率趋势相同。
Owing to weak output signals integrated amplifier is designed , which is characteristics of shorter wires , higher input impedance , higher common mode rejection ratio and series mode rejection ratio , smaller zero shift and temperature shift 由于输出信号微弱，采用短线路传输，高输入阻抗，共模抑制比和串模抑制比高，温漂和零漂小的集成运放电路。
The membrane exhibits a response behavior for ph value of solution : when the membrane in a neutral solution , it possesses a higher water flux and rejection ratio ; when the membrane in a solution with upper or lower ph value , it possesses a lower water flux and rejection ratio 在中性溶液中膜有比较高的通量和截留率，在ph值较高或较低的溶液中膜的通量和截留率都相应地下降，表现出对ph值的一种响应性。
We propose a chaos - based generation of the random ppm - ps signals , design and implement a generator of the ppm - ps signals . we introduce an if sampling technique and simulate the performances of digital demodulation techniques of using hilbert filters , sine filters , bessel filters and poly - phase filters . the poly - phase filtering method can achieve the higher mirror - frequency rejection ratio by using the low order filters 介绍了中频采样技术，并对希尔伯特滤波法、辛格内插函数修正、贝赛尔函数插值法及多相滤波法等数字解调算法进行了计算机仿真和性能比较，指出多相滤波法能以较低的阶数实现较高的镜频抑制比。
At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency 在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。
