On this condition , based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique , the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated . through the optimization of simulating parameters , not only the cross - section and trap depth of the shallow electron trap induced by the dopant , but also the optimal doping amount is obtained 在此基础上，以微波吸收介电谱检测技术的实验结果为依据，对掺有k _ 4fe ( cn ) _ 6的agcl立方体微晶在室温下的曝光过程进行了模拟，通过调节模拟参数，不但计算出由掺杂剂引入的浅电子陷阱的俘获截面和陷阱深度，而且得到了这种掺杂乳剂的最佳掺杂浓度。
