Iron and steel . methods of determination of content of non metallic inclusions in wrought steel . part ii : micrographic method using standards diagrams 钢铁.锻钢中非金属杂质含量的测定方法.第2部分:标准图象显微照像法
Advanced manufacturing processes are applied and the content of metal impurity is rigorously controlled . the oxidant is reduced to the minimum extent in each manufacturing process 采用先进制程并严格控制金属杂质的含量，并在每一制程中将氧化物降至最低程度。
Standard test method for trace metallic impurities in electronic grade aluminum - copper , aluminum - silicon , and aluminum - copper - silicon alloys by high - mass - reduction glow discharge mass spectrometer 用高质量减少辉光放电质谱仪测量电子级铝铜铝硅和铝铜硅中微量金属杂质的标准试验方法
Recently , a new gettering technique , which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities , has been concentrated 近年来一种新的吸杂技术?氦微孔吸杂技术因其对金属杂质显著的吸除效果而备受关注。
High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination 由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
After hydrotreating heavy feedstock , sulfur compounds , nitrogen compounds and metals contaminants can be removed and good rfcc feedstock can be obtained simultaneously a small amount diesel and naphtha are produced by creaking heavy oil 对重质原料进行加氢处理后，可以脱除其中的含硫、含氮化合物及金属杂质，为重油催化裂化装置提供优质的原料，同时可将重质油裂化生产少量的柴油和石脑油馏分。
Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation 所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。
According to the development trend and practical need of vo _ 2 thin film , in this study , some basic research in the field of vo _ 2 film property modification by doping with transitional metals at various valences such as zr ~ ( 4 + ) and cr ~ ( 3 + ) has been focused on 针对vo _ 2薄膜的研究发展动向和实践的需要,本论文主要在掺入不同价态的过渡金属杂质( zr4 +以及cr ~ ( 3 + )对vo _ 2薄膜性能产生的影响等方面进行了基础研究。
The series of dm tundish coating is necessary materials for replecting insulating board and realizing hign - effcieney continuous casting , they have the properties of coating uncracking , resist corrosion , decomposing , etc . compared with insulating board , they are not only have the low cost of per ton steel materials but also reduce the impurity in liquid steel , increasee the purity and improve the perfoumnce of liquid steed 中间包涂料是替代绝热板，实现高效连铸的必用材料，具有易涂抹、不开裂、耐侵蚀、易解体等特点，与绝热板相比不仅降低吨钢耐材成本，而且减少钢液中非金属杂质，提高钢液的纯度，改善钢的性能。
Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug 多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。
