About effect of plasma flow guiding , the 90 - inclined cnts was successfully modified to 45 - inclined cnts by positioning a negatively - biased metal plate above the si substrate surface to vary the plasma flow pattern 关于电浆导流板之效应，藉由通在基材上放置具有负偏压之导流板可以控制电浆之流向，使原本与基材夹90 ?角成长之碳奈米管可藉此令其与基材夹45 ?角成长。
In order to obtain similar deposition condition , very different bias must be applied to the substrate when the grounding of the arc source is different . at last , carbon films were deposited and their properties were measured 分析了这种现象产生的原因以及不同接地方式对沉积薄膜的影响，即当弧源接地状态不同时，要获得相似的沉积条件，给基片台施加的负偏压应有所不同。
As regards sk ( bias angle ) and kg ( kurtosis ) values , the fluvio - lacustrine facies or palaeosols increases considerably compared with the aeolian sands . the former displays positive bias and the latter often approximately symmetrical distribution with only a minority negative bias 就sk和kg变化而言，河湖相或古土壤值较之风成砂明显增高，前者呈正偏，后者常常表现近对称分布，仅少数呈负偏。
Mechanical folding test was applied to analyze the crack behavior of dlc films . the results show that the crack appears due to the mechanical stress and the initiation and propagations of the cracks may be suppressed with higher rf power , bias voltage and gas pressure 机械弯折试验结果表明,沉积成膜过程中,应选择较高的气压、基板负偏压、射频功率以及适量的n掺杂来制备抗往复弯折的、耐失效性能优越的膜层。
In this paper , it is proposed as a new mechanism that when a solidifying billet is in the stirring zone during continuous casting of steel , a thin steel shell is formed in front of the freezing interface , which results in a white band with a negative segregation followed by a positive one 作者提出了一个新的机制来解释白亮带的形成原因，即正在凝固的连铸钢坯位于搅拌区时，在凝固前沿形成一个薄壳，由此导致先发生负偏析，紧随其后又发生正偏析的白亮带。
1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon 研究了衬底负偏压和射频功率对制备立方氮化硼薄膜的影响立方氮化硼薄膜沉积在p型si （ 100 ） （ 8 15 cm ）衬底上，靶材为h - bn靶（纯度达99 . 99 ） ，溅射气体为氩气和氮气混合而成，制样过程中，衬底加直流负偏压。
In order to do the research works above better , we must can precisely control the width of the quasi - 1d channel and the cut off point , and also must precisely inspire current in the 2deg , so we designed the 2 channel high precision and high stability voltage source , one channel can supply the minus voltage to the split - gate , and the other one can supply the offset voltage between the source and drain pole 为了进行上述研究,必须能够精确的控制准一维电子通道的宽度和钳断,以及精确的在2deg上激励电流,由此我们设计研发了给分裂门加负偏压和给准一维电子通道加源漏偏压的两路高精度高稳定性馈源。
Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ) , assisted with substrate negative bias . in this paper , we primarily studied the effect of laser energy density , radio frequency power , substrate bias and depositing time on the growth of c - bn films , and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature 本文采用偏压辅助射频等离子体增强脉冲激光沉积( rf - pepld )方法在常温下( 25 )制备立方氮化硼( c - bn )薄膜，初步研究了薄膜沉积参数：激光能量密度、射频功率、基底负偏压和镀膜时间对立方氮化硼薄膜生长的影响，并分析了常温下用rf - pepld方法沉积立方氮化硼薄膜的形成过程和机理。
By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier 实验结果表明：随着工作气压的减小，薄膜的晶粒尺寸有所减小；通过提高氢气稀释度，利用原子氢在成膜过程中起的刻蚀作用，可以稳定结晶相并去除杂相；选择适当的热丝距离能保证反应气体充分分解，又使衬底具有较高的过冷度，是形成纳米薄膜的重要条件；采用分步碳化法可以提高形核密度，有利于获得高质量的纳米- sic薄膜；衬底施加负偏压可以明显提高衬底表面的基团的活性，因负偏压产生的离子轰击还能造成高的表面缺陷密度，形成更多的形核位置。
The emphases of our research works are as follows : under ultra - low temperature ( about 0 . 236k ) conditions , how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts 研究的重点为,在甚低温( 0 . 236k )下,通过实验研究表面声波的频率和功率,源漏偏压等因素对声电电流的影响;研究准一维电子通道中不同源漏电流与分裂门负偏压的关系,以找到分裂门的钳断点电压;以及研究声表面器件叉指换能器的频率特性等。
