With the development of fiber - optic communication systems and fiber - optic sensors , the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure get an extensively application 随着光纤通信与光纤传感的发展,以linbo _ 3为衬底材料、以m - z干涉仪为光波导结构、采用共面行波电极( cpw )为调制电极的集成光学强度调制器得到了越来越广泛的应用。
It also has short protection and voltage overshot protection block . devices and ics based on esoi have the advantages of not only cheaper substrate , good performance of soi technology , but also obtaining a certain breakdown voltage and optimization of self - heating effect 基于esoi的器件及集成电路不仅衬底材料制备工艺简单，硅层厚度均匀性好，器件及电路特性具有soi结构的优点，而且还兼顾一定的耐压，对自加热效应也得到优化。
The demand of the wafer ' s quality become higher too . the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing . in this paper , the mechanism and dynamics process of silicon polishing are systematically analyzed 随着集成电路向着甚大规模集成电路( ulsi )日新月异的发展，作为衬底材料的硅单晶片的尺寸越来越大，特征尺寸也不断减小，对硅衬底抛光片的抛光质量的要求也越来越高。
In this paper , accordiflg to the working pri nci p1es of devi cg , we design the struc ture narameter of device , and then the hexagona1 and cubic gan epitaxial layers were grown . on sapp1re and gaas substrates respect ive1y . as a resu1 t , we have fabricated gan - - based msm uv photodetectors , the responsi vity of device reach 0 本文依据msm结构探测器的工作原理，设计了器件的结构参数，并分别以蓝宝石和gaas为衬底材料生长了六方结构和四方结构的gan材料，在此基础上制备出gan - msm紫外光探测器，并取得了一些有意义的结果，我们的器件光响应度最好可达0 . 21a w 。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic 以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管( mesfet )器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si - gaas ( lecsi - gaas )衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。
Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films , we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films . influences of ts on growth orientation and epitaxial threshold temperature were observed . the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration . the threshold temperature for epitaxial growth depends on the substrate materials . this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth 文摘:在成功地外延生长超导、铁电、铁磁等多种性质的钙钛矿结构氧化物薄膜的基础上，讨论影响氧化物薄膜外延生长的一些因素.考虑到相形成和薄膜生长动力学，在利用脉冲激光淀积法外延生长氧化物薄膜中衬底温度是十分重要的工艺参数.衬底温度对成相和生长薄膜的取向都有影响.考虑到薄膜是首先在衬底表面成核、成相并生长.因此衬底材料晶格的影响是不容忽视的.观察到衬底材料对薄膜外延生长温度的影响.在适当的工艺条件下，利用低温三步法工艺制备得到有很强织构的外延薄膜.这突出表明界面层的相互作用对钙钛矿结构薄膜的取向有着相当大的影响
As far the trend of fiber - optic communication systems is to obtain higher capacity , and higher transmission speed . the intensity modulator is widely applied to a lot of fields . it is necessary for the intensity modulator subject to the laser pulse rectification systems that should be provided with following performances as high speed signal transmission and quick response and so on 光纤通信向着大容量、高速宽带方向发展,光纤延迟线系统要求强度调制器具有高速信号传输、快速响应的特点,因此以linbo _ 3为衬底材料的集成光学强度调制器具有十分良好的应用前景。
So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better . two - section cascaded ln intensity modulator applied to laser pulse rectification is presented in this thesis . it is constituted with two - section m - z optical waveguide and cpw traveling - wave modulation electrode 本课题旨在研究以linbo _ 3为衬底材料、以两级串联m - z干涉型光波导结构为基础、以cpw行波电极为调制电极、用于核爆模拟领域激光脉冲整形的集成光学强度调制器。
With the development of science and technology , more and more oxide crystals are synthesized by more and more advanced technique , the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded . corundum dopped with impurity not only is cherished because of it ' s beautiful appearance , but also is used in the fields such as electrotechnics , mechanism , laser , the optic apparatus and the underlay of semiconductor . sapphire dopped with ti3 + is the best material of the tunable solid laser . zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3 . 37ev ) . the excited emission in zno crystal at room temperature has been found , so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature 含有少量杂质的刚玉晶体( - al _ 2o _ 3 )不仅由于其色泽艳丽成为人们珍爱的名贵宝石，而且由于它具有的优异性能，被广泛应用于电工、机械、激光器，光学器件和半导体衬底材料。钛蓝宝石是目前最优异的固体宽带调谐激光材料，用于制作飞秒脉冲可调谐激光器。氧化锌晶体是直接带隙宽禁带半导体材料(禁带宽度3 . 37ev ) ，现已发现具有室温下受激发射特性，有可能实现室温下半导体紫外发光。
As far the trend of fiber - optic communication systems is to obtain higher capacity , and higher transmission speed . the intensity modulator is widely applied to a lot of fields . it is necessary for the intensity modulator subject to the laser pulse rectification systems that should be provided with following performances as high speed signal transmission and quick response and so on 光纤通信向着大容量、高速宽带方向发展,激光脉冲整形调制时要求强度调制器具有高速调制、高消光比工作特点,光纤延迟线系统要求强度调制器具有高速信号传输、快速响应的特点,因此以linbo _ 3为衬底材料的集成光学强度调制器具有十分良好的应用前景。
