Edx analysis was carried out to obtain additional information about the elemental composition . it revealed an average n content of 19at . % in the samples when c2h8n2 was selected as the nitrogen source , which was obviously higher than that when nrtcl was used ( 1 % ) X -射线能量色散谱仪( edx )对980下制备的样品进行了定量分析，其平均含氮量为19at . ，明显高于以氯化铵为氮源时cn _ x纳米管的含氮量( 1 ) 。
The effect of growth parameters on the morphology , structure and chemical compositon of sic whiskers have been characterized by x - ray diffraction ( xrd ) , scanning electron microscope ( sem ) , energy dispersive x - ray spectroscopy ( eds ) and transmission electron microscope ( tem ) 运用x射线衍射( xrd ) 、扫描电子显微镜( sem ) 、电子能量色散谱( eds ) 、透射电子显微镜( tem )等表征手段,系统研究了工艺参数对sic晶须形貌、结构和化学成份的影响。
Worn surfaces of sliding pairs were characterized by scanning electron microscopy ( sem ) . chemical compositons on the worn surfaces were analyzed by energy dispersion x - ray analysis ( edax ) , and profiles and suface roughness of the worn surfaces were measured by stylus profilmetry 用扫描电子显微镜( sem )对磨痕表面形貌进行了分析，用能量色散x射线分析( edax )对磨痕表面进行化学成分分析，并用表面轮廓仪测定了磨痕表面粗糙度和磨痕表面轮廓曲线。
In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last , use high resolution tem and eds to observe and identify the nature of microdefects 发现几乎所有高位错密度的si - gaas单晶的表层都具有网络状胞状结构或系属结构，首次对该胞状结构和系属结构的形成机制进行了研究；直接观察微缺陷，配合eds (能量色散谱)鉴定si - gaas中微缺陷的物理本质，同时分析其产生原因，讨论与位错的相互作用。
