Traditionally , zno is used as surface acoustic wave devices ( saw ) , bulk acoustic devices ( baw ) , gas sensors , varistors , transparent electrodes , uv - detectors , and etc . in recent years , zno has gained more and more attention as a wide band semiconductor 传统上， zno薄膜被广泛应用于声表面波器件、体声波器件、气敏传感器、压敏电阻、透明电极、紫外探测器等领域。近年来， zno作为宽禁带半导体光电材料的研究越来越受到人们的重视。
Zno is a - semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , lighting displayer , saw device , gas sensor et al for their excellent physical properties 氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带-族半导体材料，由于其优良的物理特性， zno薄膜在太阳能电池、紫外探测器、发光显示器件、声表面波器件、气敏传感器等方面得到了广泛的应用。
Zno film is a novel - direct compound semiconductor with wide band gap energy of 3 . 37ev and a exciton binding energy 60mev at room temperature . due to its the prerequisite for visible or ultraviolet light emission at room temperature , it has the tremendous potential applications for ultraviolet detectors , leds , lds . zno thin film is used widely and effectively in the fields of surface acoustic wave devices , solar cell , gas sensors , varistors and so on because of its excellent piezoelectrical performance 室温下禁带宽度为3 . 37ev ，激子束缚能为60mev ，具备了室温下发射紫外光的必要条件，在紫外探测器、 led 、 ld等领域有着巨大的发展潜力； zno薄膜以其优良的压电性能、透明导电性能等使其在太阳能电池、压电器件、表面声波器件、气敏元件等诸多领域得到广泛应用。
The bandgap is found to broaden with increasing dopant concentration , and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength , with both cases being attributed to the burstein - moss shift . we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films . using sol - gel technique , highly c - axis oriented zno films with 5 mol . % 为了研究zno : al薄膜在紫外光探测方面的性能,我们采用溶胶-凝胶旋涂法在si衬底上生长出具有高度c轴取向的zno : al薄膜,掺al浓度为5mol . % ,并以此作为有源区成功制备出了au / zno : al / au光电导型紫外探测器的原型器件,并对其i - v特性、紫外光响应和光致发光等方面的性能进行了研究。
Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure , fabrication simplicity , and easy integration . however , the mechanisms of the i - v characteristics under illumination , the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day 当前, gan基msm结构紫外探测器在稳态光照下的电流和响应度随偏压变化的关系、实验中观测到的光增益现象以及持续光电导效应( ppc ) ,都没有明确的理论解释,因此器件设计中难以保证gan基msm结构紫外探测器的性能。
