According to the thickness of the soi film , high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film . for thin - film soi - hvic , linear drift region doping profile is adopted to satisfy a certain breakdown - voltage , but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic , it can take advantage of cmos technology on silicon to obtain the high voltage Soi高压集成电路根据顶层硅厚度可分为厚膜和薄膜两大类。为了满足一定的击穿电压,薄膜soi高压电路一般采用漂移区线性掺杂技术,但其工艺复杂,且自热效应严重;而厚膜soi高压集成电路可以通过移植体硅cmos技术来实现高压,但是由于其硅膜较厚,介质隔离成为厚膜soi高压集成电路的关键技术。
