Theoretical calculation of gaseous concetration by the dynamic pulse measurent of gas - sensing element 气敏元件动态脉冲测试时气体浓度的理论计算
Through the technology of rf and dc reactive sputtering manufacture , h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached 通过交流和直流反应溅射，我们以硅基片(表面上有白金加热电极)为基底制作h _ 2s气敏元件。
The conductivity - temperature property of gas sensor made by nano - sized sno2 powder has typical surface controlled sensor ' s characteristic , the conductivity peak is about 130 用sno _ 2纳米粉体制成旁热式气敏元件，所制元件的电导-温度特性呈现明显的表面控制型特征，其电导峰出现在130左右。
As an example , the testing system of gas - sensor built with virtual instrument presents many characters such as high performance and low cost , and the traditional testing systemit can be completely took place of 用虚拟仪器组建的气敏元件测试系统具有很高的性能价格比，完全可以取代传统的上下微机结构的测试系统。
In a general way , the sensitive performance of gas sensor is closely relative to the working temperature . it is very easy for mems to integrate the gas sensitive element , the heater and temperature sensor together 气体传感器的敏感性能一般与工作温度密切相关， mems技术很容易将气敏元件和加热元件、温度探测元件制作在一起，保证了气体传感器的优良性能。
