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峰位

"峰位"的翻译和解释

例句与用法

  • The saturation magnetism and the remnant magnetism of the composite particles increase while the coersive increase then decrease with the feed content of nano fe particles increase . with the feed content of teos increase , the saturation magneti sm and the remnant magnetism of the composite particles decrease , while the coersive changed little . the real part of the permittivity decrease with the shell of particles increase
    随着纳米粒子表面二氧化硅含量,复合粒子介电常数实部逐渐减小,介电常数虚部在2ghz - 10ghz处随着二氧化硅包裹层厚增大而变小,在10ghz - 18ghz形成一个峰值,随着包裹层厚的增大,峰位逐渐向低频移动。磁导率变化规律不明显。
  • The experiments showed us : firstly , mediums with different magnetic and dielectric properties had different influence on the microwave - absorbing properties of spinel ferrite ; secondly , magnetic texture treatment greatly affected the microwave - absorbing properties of the spinel ferrite - based mixed material which contained single - domain particles of hexagonal ferrite , changing the matching thickness , the density of area and the position of absorption peaks and increasing the absorption quantity and the 10db bandwidth ; thirdly , the coupling effect between different layers affected the microwave - absorbing properties of the double - layer spinel ferrite - based mixed material , decreasing its matching thickness and density of area and increasing the position of absorption peaks
    实验发现: ( 1 )不同磁性与电性的介质对尖晶石型铁氧体吸波特性的影响不同; ( 2 )磁织构化处理对含有六角晶系铁氧体单畴颗粒的尖晶石型铁氧体基混合吸波材料的性能影响很大,可以改变匹配厚度、面密度与吸收峰峰位,提高吸收量与10db带宽; ( 3 )对于双层材料,层间耦合作用会影响其吸波性能,降低匹配厚度与面密度,提高吸收峰峰位。
  • The absorption characteristics was that the surface plasma absorption peak appeared around 570 nm shifted to a short wavelength and strengthened as the cu composition increased . but the maximal shift range of the absorption - edge preponderated over 500 nm , and leaded that the dipolar plasma resonance absorption peak were covered up and gradually disappeared in the absorption spectrum . we theoretically explained the mechanism of the modulating action
    实验观察到cu表面等离子体共振吸收峰位在570lun附近的吸收边频移量超过了500nln .理论分析表明,吸收峰位的移动主要源于偶极共振,而峰形的宽化主要由纳米粒子的表面效应和量子尺寸效应引起
  • In the third chapter , the influence of current density , solution concentration , erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing , and with erosion time and aging time prolonging ; with the increasing of solution concentration , peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1 . above phenomena can be explained by quantum confinement and light center model , but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence . at present , radiation mechanism is still one of the primary problems in the study of ps
    在第z三章中;通过对比,分析了电流密度、阳极化时间、溶液浓度以及自i然氧化时间对多孔硅光致发光光谱的影响,认为在一定的范围内,多i孔硅的发光峰位会随电流密度的增大而蓝移,要获得较强的发光,需z要选择合适的电流密度;随着腐蚀时间的延长,多孔硅的发光峰位会i发生蓝移;当f酸的浓度较小q : 1 )时,峰位随浓度的增大表现为向i低能移动;而当f酸的浓度较大河山时,峰位随浓度的增大则表现z为移向高能;多孔硅在空气中自然氧化;其发光峰位发生蓝移,而强i度随放置时间的延长而降低。
  • With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
    用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜,在较低的电压万均观察到了室温可见电致发光现象,峰位都在510nm左右,其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响,表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。
  • The uv / vis shows : the uv / vis spectra of the films grown in gas pressure markedly differed from that of the c60 films grown in vacuum , a continuous red shifting of all feature peaks occurs in gas c60 cluster film distinctly ; also the ranges of the red shifting increases little with the increase of gas pressure
    紫外可见吸收光谱表明:与真空中制备的c60薄膜比较,发现氮气氩气中制备的c60薄膜的紫外可见吸收的相对强度明显不同,吸收峰位明显红移,红移幅度从几个纳米到二十几个纳米;并且随着气氛压强的增加吸收峰位红移增加。
  • The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller . the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method . at the same time , it was observed that the smaller the dimension of the porous silicon , the broader energy gap of the porous silicon
    采用脉冲和直流电化学腐蚀两种方法制备多孔硅,对这两种方法制备的多孔硅样品进行扫描电镜和荧光光谱的测量,发现脉冲腐蚀制备的多孔硅样品比直流腐蚀制备的多孔硅样品表面均匀、颗粒尺寸小、发光强度大,而且发光峰位有明显的蓝移现象。
  • For other sample which also appeared two peaks the change of its two peaks varied with the temperature was observed . the higher energy peak remained stable with the temperature change . however the intensity of the lower energy peak was enhanced and the peak position had a blue - shift with the rise of temperature
    对于荧光双峰的多孔硅样品,研究了荧光峰随温度变化的性质,随着温度的升高,荧光高能峰基本上不发生变化,而荧光低能峰随着温度的升高其强度逐渐增强,峰位发生明显的蓝移。
  • 4 . the interaction between la3 + and mp - 11 would decrease in the intensity of the soret band and shift the band position , because of the strong coordination action of la3 + with o of the carboxyl group in the heme group and weak interaction of la3 + with o of the amido group in the peptide . the interaction also increases in the non - planarity of the heme group
    由于la ~ ( 3 + )与血红素上羧基氧o配位键合作用较强,而与多肽链上的酰氨氧o键合作用较弱,因此使mp - 11的soret带吸收值下降,峰位红移,血红素环的非平面性增加。
  • As the position , intensity and width of the plasma resonance absorption peak are concerned , we find that maxwell - garnett and ping sheng theories are applicable for the cermet films with low metal volume fraction , while bruggeman theory fits better than maxwell - garnett theory for au - mgf2 films with high metal volume fraction
    就金属颗粒表面等离子共振引起的吸收峰的峰位、强度和峰形而言,对低金属组分的纳米金属陶瓷薄膜光学常数的计算, maxwell - garnett和pingsheng要比bruggeman理论结果好。
  • 更多例句:  1  2  3
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