The aires was conclusively demonstrated as a particular ir property exhibited commonly by nanostructured thin films of pt group metals and their alloys 研究结果进一步证明， aires是纳米结构铂族金属及合金薄膜材料普遍具有的特殊红外光学性能。
Wu ping , wang fengping , qiu hong , pan liqing , tian yue : effect of substrate temperature and annealing on the anisotropic magnetoresistive property of nife films , rare metals , 22 ( 3 ) ( 2003 ) 202 - 205 王凤平，刘还平，吴平，潘礼庆，邱宏，田跃，罗胜：基片温度对坡莫合金薄膜结构和磁电阻的影响，发光学报， 24 （ 4 ） （ 2003 ） 435 - 437 。
In order to explore the zno - based material with a wider band gap , mgxzn1 - xo alloy thin films were fabricated by the sol - gel deposition method . and the structure and optical properties were also studied 为了探索波长更短的发光材料，我们采用溶胶凝胶方法制备出了mg2 +离子掺杂的mgxzn1 - xo合金薄膜，并系统地研究了它的结构和光学性质。
When x 0 . 36 , the alloy thin films keep the wurtzite structure . and the band gap could be varied from 3 . 40 ev to 3 . 93 ev . the mg0 . 05zn0 . 95o and mg0 . 15zn0 . 85o alloys with wurtzite structure show high thermal stability up to 1000 研究表明当x的取值小于等于0 . 36时，合金薄膜会保持zno六角形纤锌矿结构，此时薄膜的能隙宽度可以在3 . 4ev到3 . 93ev之间调节。
As a functional material , tini shape memory alloy thin film has the characteristics of large stress , strain and high work density . it is a perfect micro - actuator candidate for the micro - electrical mechanical system ( mems ) Tini形状记忆合金薄膜被认为是目前微机械领域中较有发展前景的一种大应力、应变和高单位功密度的微驱动器材料，对它的研究和开发必将推动微电子机械系统的发展，为人类探索和操作微观世界提供一种有效的工具。
However , when x is 0 . 36 , phase separation will occur at 800 . the intense ultraviolet photoluminescence ( pl ) from mgxzn1 - xo alloy thin film was observed at room temperature . with increasing the contant of mg2 + ion in the film , the peak position is blue - shifted to higher energy side 从x射线衍射的结果中还可以看到， x = 0 . 36的合金薄膜是一种亚稳态，当热处理温度在800以下时它是纤锌矿结构，而在800以上时就出现了分相。
Determined by dsc . whereafter , the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ) , and the difference of morphology between the two sides is observed . it has been shown that , in the growing surface of sputtered tini film , the trend of grain to accumulating along the normal direction like a column is clearly observed , and the grain is very loose which resulted in more microcavities , but in the surface facing to glass substrate , grain is so compact that there are hardly microcavities 通过溅射法，在玻璃衬底上淀积了tini薄膜，并在600进行了真空退火， dsc法测得其马氏体逆相变峰值温度为75 ，利用原子力显微镜，对玻璃基tini形状记忆合金薄膜的衬底面与生长面进行了表面微观形貌分析，发现：生长面晶粒呈现出沿薄膜法线方向柱状堆积的趋势，晶粒致密性差，微孔洞多；而衬底面晶粒致密，几乎没有微孔洞存在。
Using jgp560c magnetron sputtering equipment , cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power , gas flow , vacuum air pressure , magnetoelectricity power and substrate temperature on deposition rate of film , discovered that dc sputtering power is the most key factor influencing the deposition rate 在jgp560c型超高真空多功能磁控溅射镀膜机上，采用直流磁控溅射法在cdznte晶体上制备出cu ag合金薄膜，揭示了气体流量、直流溅射功率、励磁电源功率、工作气压和衬底温度等工艺参数对沉积速率的影响规律。结果表明溅射功率对沉积速率的影响最大，随溅射功率的增大沉积速率快速增大。
Pulsed , filtered cathode arc plasma deposition ( pfcapd ) is a new deposition technology for a range of metals and compounds films free of the microdroplets associated with conventional arc evaporation , and it seems as one of the best methods to deposition hydrogen - free diamond like carbon which has widespread applications for its unique properties 脉冲磁过滤阴极弧等离子体沉积由于能很好地过滤液滴，沉积几乎所有金属及其合金薄膜材料，尤其能沉积极有应用前景的类金刚石膜及用于微电子工业的铜内连材料，日益受到重视。
The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient , and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process . this method gives a new path to prepare mgxzn1 - xo alloy films 实验结果表明利用电子束蒸发技术制备的zno薄膜材料，在经过氧气气氛下的二次退火处理后，能够表现出较好的发光和结构特性；以mgo薄膜作为缓冲层制备出了高质量的mgzno合金薄膜材料，这为开展mgzno合金薄膜材料的研究开辟了新的途径。
