In structure , there is no need of using a substrate with high dielectric constant to reduce the filter size , and it is suitable to be buried into the substrate and thus easy to integrate with other sub - modules to form a single , miniaturized , multifunction module 结构上，不需要使用高介电常数的介质来降低滤波器尺寸，并且适于埋入介质层内与其他次模组整合成单一、微小化之多功能模组。
The analytical mode is based on the theory of sound propagation in layered media . the concept of equivalent parameters is established . the absorption of sound energy by damping layer ' s is represented by use of complex sound impedance 解析模型以分层介质中的波动理论为基础，建立了等效参数的概念，并运用声阻抗的复数表示法把阻尼层对介质层声能吸收的影响都考虑进去，通过比较敷设消声覆盖层前后多层传递损失的差异来获得消声层的效率。
The subregion with pure dielectric layers is analyzed by mol and the fast fourier transform ( fft ) is introduced to reduce the computing time , while the subregion with conductors is analyzed by fdfd to take advantage fully the superiorities of these two methods 通过在纯介质区域使用直线法，导体所在区域使用有限差分法分别进行求解，充分发挥两种方法各自的优越性。由于在纯介质区域中使用了直线法求解，因此该算法具有计算时间与介质层厚度无关的突出优越性。
We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5 研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。
The heated part of thermal resistance temperature sensor is thin wire which circled framework that made up by insulated material . if there is different temperature in the measured medium , the measured temperature is its average temperature . although the shapes of thermal resistance are different , their basic structure are same on the whole , usually composed by temperature sensor insulated jacket protective tube junction box , etc 热电阻的受热部分感温元件是用细金属丝均匀地双绕在绝缘材料制成的骨架上，当被测介质中有温度梯度存在时，所测得的温度是感温元件所在范围内介质层中的平均温度。
For a soil of water - enriched , a steady theoretical model is developed for downhole heat exchanger ( dhe ) embedded in a saturated porous medium , based on combined with theory study and indoor imitation experimental equipment , and dimensionless heat transfer regularity of saturated porous medium is summarized 对于富含水地下土壤层，本文利用建立的室内模拟实验台与理论模型相结合的研究方法，建立了稳态的饱和型多孔介质层理论模型，总结归纳出无因次多孔介质参数的传热规律。
As one kind of si nanostructures , si - rich si02 films are the important si - based light - emitting materials . moreover , silicon is the leading semiconductor in the microelectronic industry . furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit . so si - rich films are considered suitable for optoelectronic applications 另一种观点认为纳米硅薄膜中的可见光发射来自界面或介质层中的发光中心。还有人认为对于镶嵌在sio _ 2中的纳米晶粒来说，与氧有关的缺陷可能是导致可见光或蓝绿光发射的主要原因。
The other is the transmission line on low - resistivity silicon covered polyimide . the initial experiment results indicate that the inserter loss has been greatly reduced . these two kinds of processes can be compatible with commercial cmos process and easily integrated the transmission line with microwave circuits 方法之一将共平面波导直接制备于高阻硅衬底( 1000 ? cm )之上，另一种方法是在低阻硅衬底( 0 . 5 ? cm )上采用不同厚度的聚酰亚胺介质层，测试结果都表明微波传输损耗得到了不同程度的改善。
