Because of the limitation of thin silicon film epitaxial technology , it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time , which makes the series resistance large 但长期以来，由于薄硅外延生长技术的限制，无法生长出优质的厚度小于2 m的薄硅外延层，使硅肖特基二极管的串联电阻无法降的更低，限制了其截止频率的提高。
The fault that the series resistor has high value can be avoided by using the constant current amplifier , and the fault that the dividing resistor reduces the working voltage of the speaker can be avoided by using the constant voltage amplifier 使用恒流功放，可以避免传统方法中串联电阻取值过大的缺点；使用恒压功放，可以消除分压电阻降低扬声器工作电压的不足。
We probed into the most source - drain resistance and its temperature behavior particularly . the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased 对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。
Improving the electroless plating process based on the work of the past decreases the series resistance from 0 . 5 to 0 . 1 , increases the parallel resistance from 45 to 1119 . 7 , improves the filling factors from 49 . 8 % to 66 . 3 % , therefore the conversion efficiency comes to 8 . 2 % 机械刻槽电池电池结构的设计是依据bp公司的刻槽电池设计的，在以前工作的基础上，进一步改变化学镀工艺条件，是串联电阻由原来的0 so降低到了0 iq ，并联电阻由原来45q增加到了1119
Plastic shell glow lamp is assembled by neon lamp , or fluorescent lamp , lamp holder , series resistor and plastic caps , it can be directly connected in circuit without resistor connected , which also can be divided into screw socket e10 13 and socket ba9s 14 , the applicable voltage is 100 - 380v 塑壳辉光灯由氖灯或者荧光辉光灯灯头串联电阻塑料罩壳组合而成，可直接使用在电路的灯座中，不需要外接电阻，具有安全使用方便等优点。塑壳辉光灯分为红色绿色两种，灯头有螺口e10 13和插口ba9s 14两种，使用电压100 - 380v 。
Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation 研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。
Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis . after sioa surface passivation and forming gas treatment utilization in the scale manufacture , the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage , fill factor and efficiency improved 本论文研究了提高晶体硅太阳电池效率规模化生产工艺技术的主要环节和相关机理，将sio _ 2表面钝化、 forminggas处理用于规模化生产，降低了太阳电池的表面复合速度和串联电阻，提高了开路电压、填充因子和转换效率。
Methods of calculating the inductor ' s quality factor and inductance are studied . experimental results are analyzed in detail and some results are obtained : quality factor q decreasing with the increase of turns n ; inductance l proportional to turns n2 ; series resistance rs increasing - iv - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ as g - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ with frequency due to skin effect 得出了一些有用的结论如平面螺旋电感的q值随着圈数n的增加而减小；电感量与圈数n的平方成正比；高频时，圈数越多，串联电阻的趋肤效应越厉害，阻值越大等。
